| PART |
Description |
Maker |
| MB84VB2000-10 MB84VB2001 MB84VB2001-10 |
PT 8C 8#20 PIN RECP 1M X 8 FLASH 3V PROM, 100 ns, PBGA48
8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| MB84VA2100 MB84VA2101-10 MB84VA2101 MB84VA2100-10 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
(MB84VA2100 / MB84VA2101) 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| AM29LV160 AM29LV160BB70RSEB AM29LV160BB70REEB AM29 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
6800uF 100WV 20% *NO Pb*
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PBGA48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PDSO48
VARISTOR METAL-OXIDE 150V RAD.3 10MM-DIA BULK 2M X 8 FLASH 3V PROM, 70 ns, PDSO44
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
http://
|
| AT91FR40162SB-CU AT91FR40162SB AT91FR40162SBPRE AT |
Flash memory in a single compact 121-ball BGA package
1024K Words 16-bit Flash Memory (2M bytes)
|
ATMEL Corporation
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| E28F004B5T60 E28F004B5T80 28F200B5 E28F400B5B60 E2 |
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2/ 4/ 8 MBIT
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2 / 4 / 8 MBIT
Dual-Slot, PCMCIA Analog Power Controller
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 1M X 8 FLASH 5V PROM, 90 ns, PDSO48
DIRECTIONAL COUPLER, 20DB, SMT 256K X 8 FLASH 5V PROM, 70 ns, PDSO48
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 1M X 8 FLASH 5V PROM, 80 ns, PDSO48
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| CAT28F020HI-12T CAT28F020 CAT28F020HI-90T CAT28F02 |
2 Megabit CMOS Flash Memory
2 Mb CMOS Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON Semiconductor
|
| MB84VA2000-10 MB84VA2001-10 MB84VA2000 |
(MB84VA2000 / MB84VA2001) 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM
8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA48
|
Fujitsu Media Devices
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| CAT28F512P-12T CAT28F512N-15T CAT28F512NA-12T CAT2 |
64K X 8 FLASH 12V PROM, 90 ns, PDSO32
512K-Bit CMOS Flash Memory
Bulk Erase Flash Memory, 512Kb
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
http://
CATALYST[Catalyst Semiconductor]
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
